Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2005-04-12
2005-04-12
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S301000, C438S017000
Reexamination Certificate
active
06878965
ABSTRACT:
A test structure for determining a doping region of an outer capacitor electrode of a trench capacitor in a memory cell array. The trench capacitors of the memory cell array are arranged in matrix form. The test structure has two parallel rows of trench capacitors. The outer capacitor electrode of each row of trench capacitors is electrically connected to one another and the basic area of at least one trench capacitor of each row is lengthened on the side facing the other row in such a way that the two trench capacitors overlap in a direction transverse to their extent.
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Felber Andreas
Rosskopf Valentin
Greenberg Laurence A.
Le Thao X
Locher Ralph E.
Pham Long
Stemer Werner H.
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