Method of polycrystalline silicon hydrogenation

Details Method of polycrystalline silicon hydrogenation Method of polycrystalline silicon hydrogenation

1996-05-31

1998-01-27

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427527, 437937, B05D 306

Patent

active

057119988

ABSTRACT:
A method of hydrogenating poly-Si in an electrical device including the step of placing a substrate having a poly-Si component in a radio frequency induced low pressure, high density plasma reactor. The method further includes the step of introducing into the radio frequency induced low pressure, high density plasma reactor a gas including at least hydrogen or deuterium. The hydrogenation of the poly-Si component is accomplished by striking a plasma in the radio frequency induced low pressure, high density plasma reactor under conditions that promote hydrogenation of the poly-Si component.

REFERENCES:
patent: 5314603 (1994-05-01), Sugiyama et al.
Peter Singer, "Trends in Plasma Sources: The Search Continues", Semiconductor International, Jul. 1992, pp. 5 -9.
Michael A. Lieberman and Allan J. Lichtenberg, Principles of Plasma Discharges and Materials Processing, 1994, Published by A Wiley-Interscience Publication, p. 388.
Nakazawa et al, Appl. Phys. Lett. 51(20) Nov. 1987, pp. 1623-1625.

Affiliated with

Also associated with

Rating

Method of polycrystalline silicon hydrogenation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of polycrystalline silicon hydrogenation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of polycrystalline silicon hydrogenation will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-339991