Magnetic random access memory device having write test mode

Details Magnetic random access memory device having write test mode Magnetic random access memory device having write test mode

2005-09-20

2005-09-20

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06947315

ABSTRACT:
Magnetoresistive elements as memory cells are two-dimensionally arranged. To write data in magnetoresistive elements, selected memory cells are subjected to current magnetic fields generated by a current in a row direction and current magnetic fields generated by a current in a column direction. A setting circuit holds set values used to set a write current, in order to vary the magnitudes of magnetic field in the row and column direction between a write test mode period and a normal operation period. In the write test mode, the value of a write current flowing through write interconnects is set on the basis of the set values held in the setting circuit.

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Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell”, 2000 IEEE ISSCC Digest of Technical Papers, ISSCC 2000/ Session 7/ TD: Emerging Memory & Device Technologies/ Paper TA 7.2, Feb. 2000 , pp. 128-129, 94-95, 409-410.

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