Stacked hybrid semiconductor-magnetic spin based memory

Details Stacked hybrid semiconductor-magnetic spin based memory Stacked hybrid semiconductor-magnetic spin based memory

2005-03-22

2005-03-22

Auduong, Gene N. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S170000, C365S173000

Reexamination Certificate

active

06870761

ABSTRACT:
A new nonvolatile hybrid memory cell stacked architecture is provided. The cells are comprised of magnetic spin storage elements stacked on top of each other on a silicon substrate, as well as one or two semiconductor FET isolation elements.

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