Semiconductor device utilizing dummy features to form...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S774000

Reexamination Certificate

active

06870230

ABSTRACT:
An inventive semiconductor device includes: a substrate; a plurality of first projections each including at least a gate electrode and formed on the substrate; and a plurality of second projections formed on the substrate. When a contour surface constituted by the uppermost face of the substrate and by side and upper faces of the first and second projections is measured for every partial area per unit area of the substrate, the maximum partial area of the contour surface is 1.6 or less times larger than the minimum partial area of the contour surface.

REFERENCES:
patent: 5883436 (1999-03-01), Sadjadi et al.
patent: 5923969 (1999-07-01), Oyamatsu
patent: 6096641 (2000-08-01), Kunikiyo
patent: 6204137 (2001-03-01), Teo et al.
patent: 6306755 (2001-10-01), Zheng
patent: 6384450 (2002-05-01), Hidaka et al.
patent: 20010055842 (2001-12-01), Uh et al.
patent: 20020076867 (2002-06-01), Lee et al.
patent: 11330427 (1999-11-01), None

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