Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-22
2005-03-22
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S774000
Reexamination Certificate
active
06870230
ABSTRACT:
An inventive semiconductor device includes: a substrate; a plurality of first projections each including at least a gate electrode and formed on the substrate; and a plurality of second projections formed on the substrate. When a contour surface constituted by the uppermost face of the substrate and by side and upper faces of the first and second projections is measured for every partial area per unit area of the substrate, the maximum partial area of the contour surface is 1.6 or less times larger than the minimum partial area of the contour surface.
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Matsuda Takayuki
Segawa Mizuki
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Smoot Stephen W.
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