Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-07-05
2005-07-05
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S524000
Reexamination Certificate
active
06914317
ABSTRACT:
A microelectronic substrate and method for manufacture. In one embodiment, the microelectronic substrate includes a body having a first surface, a second surface facing a direction opposite from the first surface, and a plurality of voids in the body between the first and second surfaces. The voids can extend from the first surface to a separation region beneath the first surface. At least one operable microelectronic device is formed at and/or proximate to the first surface of the substrate material, and then a first stratum of the microelectronic substrate above the separation region is separated from a second stratum of the microelectronic substrate below the separation region. The first stratum of the microelectronic substrate can be further separated into discrete microelectronic dies before the first stratum is separated from the second stratum. In one aspect of this embodiment, the substrate can support a film and microelectronic devices can be formed in the film and/or in the substrate.
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Ellis Mark W.
Larson Charles E.
Long Jon M.
Murphy Timothy E.
Riley Vincent L.
Fourson George
Perkins Coie LLP
Toledo Fernnado L.
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