Magnetic random access memory

Details Magnetic random access memory Magnetic random access memory

2005-01-11

2005-01-11

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S185170, C365S185230, C365S189011, C365S230010, C365S230060

Reexamination Certificate

active

06842362

ABSTRACT:
One end of a write word line is connected to a decoder/driver unit. The decoder/driver unit is constituted by a P channel MOS transistor, an N channel MOS transistor, a differential amplifier, and an NAND circuit. When WRITE, CHRDY and RA1all become “H”, an output signal from the NAND circuit becomes “H”, and a write current flows through the write word line. At this moment, a value of the write current is restricted to a value which does not exceed VLIMIT/R1by the differential amplifier. R1is a wiring resistance of the write word line.

REFERENCES:
patent: 6111783 (2000-08-01), Tran et al.
patent: 6490191 (2002-12-01), Pöchmüller
patent: 6646911 (2003-11-01), Hidaka
patent: 6693822 (2004-02-01), Ito
Takeshi Honda, et al., “MRAM-Writing Circuitry to Compensate for Thermal-Variation of Magnetization-Reversal Current”, 2002 Symposium on VLSI Circuits Digest of Technical Papers, 2002, pp. 156-157.

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