Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-09-20
2005-09-20
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C360S327300
Reexamination Certificate
active
06947316
ABSTRACT:
There are provided a magnetoresistive sensor of the type of flowing a signal sensing current perpendicular to the plane to improve resolution at reproducing a signal, a magnetic head using the magnetoresistive sensor, and a magnetic disk apparatus.A magnetoresistive sensor comprising a substrate, a pair of magnetic shield layers consisting of a lower magnetic shield layer and an upper magnetic shield layer, a magnetoresistive sensor layer, disposed between the pair of magnetic shield layers, an electrode terminal for flowing a signal current perpendicular to the plane of the magnetoresistive sensor layer, and magnetic domain control layers for controlling Barkhausen noise of the magnetoresistive sensor layer, wherein the magnetic domain control layers disposed in contact with opposite ends of the magnetoresistive sensor layer consist of a material having high electric resistivity and with a specific resistance not less than 10 mΩcm so as to give the magnetoresistive sensor having excellent reproducing resolution. The sensor is used to provide a magnetic head having excellent reproducing resolution and a magnetic disk apparatus.
REFERENCES:
patent: 5729410 (1998-03-01), Fontana et al.
patent: 5883764 (1999-03-01), Pinarbasi
patent: 5910344 (1999-06-01), Hasegawa et al.
patent: 6243288 (2001-06-01), Ishikawa et al.
patent: 6717845 (2004-04-01), Saito et al.
patent: 6721201 (2004-04-01), Ikeda
patent: 6826078 (2004-11-01), Nishiyama et al.
patent: 2001/0021089 (2001-09-01), Miyauchi et al.
patent: 04-358310 (1992-12-01), None
patent: 05-266437 (1993-10-01), None
patent: 09-282618 (1997-10-01), None
patent: 11-316919 (1999-11-01), None
patent: 2000-101164 (2000-04-01), None
patent: 2001-250208 (2001-09-01), None
Tehrani, et al., “Progress and Outlook for MRAM Technology”, IEEE Transactions on Magnetics, vol. 35, No. 5, Sep. 1999, pp. 2814-2819.
Arai Reiko
Soeya Susumu
Takahashi Hiromasa
Antonelli Terry Stout & Kraus LLP
Hitachi , Ltd.
Phung Anh
LandOfFree
Magnetoresistive sensor including magnetic domain control... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetoresistive sensor including magnetic domain control..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive sensor including magnetic domain control... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3398467