Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-17
2005-05-17
Smith, Matthew (Department: 2825)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S371000, C257S344000, C257S346000, C257S391000, C257S392000, C257S407000, C257S408000, C438S153000, C438S154000, C438S199000, C438S231000, C438S232000, C438S279000, C438S299000
Reexamination Certificate
active
06894356
ABSTRACT:
A static random access memory (SRAM) cell is given increased stability and latch-up immunity by fabricating the PMOS load transistors of the SRAM cell to have a very low drain/source dopant concentration. The drain/source regions of the PMOS load transistors are formed entirely by a P−− blanket implant. The PMOS load transistors are masked during subsequent implant steps, such that the drain/source regions of the PMOS load transistors do not receive additional P-type (or N-type) dopant. The P−− blanket implant results in PMOS load transistors having drain/source regions with dopant concentrations of 1e17 atoms/cm3or less. The dopant concentration of the drain/source regions of the PMOS load transistors is significantly lower than the dopant concentration of lightly doped drain/source regions in PMOS transistors used in peripheral circuitry.
REFERENCES:
patent: 5497023 (1996-03-01), Nakazato et al.
patent: 5589701 (1996-12-01), Baldi
patent: 5668770 (1997-09-01), Itoh et al.
patent: 5780330 (1998-07-01), Choi
patent: 5804477 (1998-09-01), Lien
patent: 6031267 (2000-02-01), Lien
patent: 6191460 (2001-02-01), Choi et al.
Bever Hoffman & Harms LLP
Integrated Device Technology Inc.
Keshavan B. V.
Smith Matthew
LandOfFree
SRAM system having very lightly doped SRAM load transistors... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with SRAM system having very lightly doped SRAM load transistors..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SRAM system having very lightly doped SRAM load transistors... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3398275