Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-26
2005-07-26
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S302000, C257S303000, C257S304000, C257S305000, C257S328000, C257S329000, C257S331000, C257S332000, C257S333000, C257S334000, C257S905000
Reexamination Certificate
active
06921939
ABSTRACT:
A method for making a power MOSFET includes forming a trench in a semiconductor layer, forming a gate dielectric layer lining the trench, forming a gate conducting layer in a lower portion of the trench, and forming a dielectric layer to fill an upper portion of the trench. Portions of the semiconductor layer laterally adjacent the dielectric layer are removed so that an upper portion thereof extends outwardly from the semiconductor layer. Spacers are formed laterally adjacent the outwardly extending upper portion of the dielectric layer, the spacers are used as a self-aligned mask for defining source/body contact regions.
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Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Fairchild Semiconductor Corporation
Soward Ida M.
Zarabian Amir
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