Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-04-12
2005-04-12
Yoha, Connie C. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S173000, C365S171000, C360S324100, C360S324120
Reexamination Certificate
active
06879512
ABSTRACT:
A memory device includes a plurality of memory elements each having: an antiferromagnetic layer, a first pinned layer coupled to the antiferromagnetic layer, a nonmagnetic spacer layer coupled to the first pinned layer, a second pinned layer coupled to the spacer, and a free layer coupled to the second pinned layer. A plurality of single wiring circuits are provided, each wiring circuit being coupled to a memory element. An addressing mechanism applies current pulses to the memory elements via the single wiring circuits for writing to the memory elements. The addressing mechanism also applies a sense current to the memory elements via the single wiring circuits for reading the memory elements.
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International Business Machines - Corporation
Kotab Dominic M.
Yoha Connie C.
Zilka-Kotab, PC
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