Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-03-01
2005-03-01
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S736000, C438S725000, C438S745000
Reexamination Certificate
active
06861367
ABSTRACT:
A semiconductor processing method includes forming an antireflective coating comprising Ge and Se over a substrate to be patterned. Photoresist is formed over the antireflective coating. The photoresist is exposed to actinic radiation effective to pattern the photoresist. The antireflective coating reduces reflection of actinic radiation during the exposing than would otherwise occur under identical conditions in the absence of the antireflective coating. After the exposing, the substrate is patterned through openings in the photoresist and the antireflective coating using the photoresist and the antireflective coating as a mask. In one implementation, after patterning the substrate, the photoresist and the antireflective coating are chemically etched substantially completely from the substrate using a single etching chemistry.
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Lee, Hyun-Yong et al., “Lithographic Properties of SiNxand Se75Ge25Thin Films as the Low-Energy Ion-Beam Resist”, Proceedings of the 5thInternational Conference on Properties and Applications of Dielectric Materials, May 25-30, 1997, p.635-638.
Bowes Steve W.
Brooks Joseph F.
Campbell Kristy A.
Gilton Terry L.
Moore John T.
Jr. Carl Whitehead
Pham Thanhha
Wells St. John P.S.
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