Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-19
2005-07-19
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S149000, C438S157000
Reexamination Certificate
active
06919601
ABSTRACT:
A semiconductor device includes an active layer having a first side surface, a second side surface perpendicular to the first side surface and a third side surface opposite to the second side surface, a first gate electrode arranged on the first side surface with a first gate insulating film disposed therebetween, a second gate electrode formed of a material different from that of the first gate electrode and arranged on the second side surface with a second gate insulating film disposed therebetween, and a third gate electrode formed of a material different from that of the first gate electrode and arranged on the third side surface with a third gate insulating film disposed therebetween.
REFERENCES:
patent: 6525403 (2003-02-01), Inaba et al.
patent: 2004/0075122 (2004-04-01), Lin et al.
patent: 2-263473 (1990-10-01), None
R. Chau et al., “Advanced Depleted-Substrate Transistors: Single-gate, Doubled-gate and Tri-gate,” 2002 International Conference on Solid State Devices and Materials (SSDM), D-1-1, 2002, pp. 68-69.
X. Huang et al., “Sub 50-nm FinFET: PMOS,” International Electron Devices Meeting (IEDM) Tech. Digest, 1999, pp. 67-70.
D. Hisamoto et al., “A Folded-channel MOSFET for Deep-sub-tenth Micron Era,” International Electron Devices Meeting, 1998, pp. 1032-1034.
J. Hergenrother et al, International Electron Devices Meeting, 1999, p. 75.
Flynn Nathan J.
Frommer & Lawrence & Haug LLP
Kabushiki Kaisha Toshiba
Quinto Kevin
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