Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2005-03-29

2005-03-29

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S635000

Reexamination Certificate

active

06872656

ABSTRACT:
A semiconductor device includes a first interconnection, an interlayer insulation film covering the first interconnection a contact hole provided in the interlayer insulation film and reaching the first interconnection, a first barrier metal and a tungsten plug provided in the contact hole, an oxide film provided at a surface of the tungsten plug, and a second barrier metal and a second interconnection provided on the oxide film.

REFERENCES:
patent: 5007981 (1991-04-01), Kawasaki et al.
patent: 5135608 (1992-08-01), Okutani
patent: 5200017 (1993-04-01), Kawasaki et al.
patent: 6448651 (2002-09-01), Kim
patent: 11-330241 (1999-11-01), None
patent: 430973 (2001-04-01), None
patent: 468225 (2001-12-01), None

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