Horizontal surrounding gate MOSFETs

Details Horizontal surrounding gate MOSFETs Horizontal surrounding gate MOSFETs

2005-07-05

2005-07-05

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257S353000, C257S401000

Reexamination Certificate

active

06914299

ABSTRACT:
A horizontal surrounding gate MOSFET comprises a monolithic structure formed in an upper silicon layer of a semiconductor substrate which is essentially a silicon-on-insulator (SOI) wafer, the monolithic structure comprising a source and drain portion oppositely disposed on either end of a cylindrical channel region longitudinally disposed between the source and drain. The channel is covered with a gate dielectric and an annular gate electrode is formed circumferentially covering the channel.

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