Etching methods, methods of removing portions of material,...

Details Etching methods, methods of removing portions of material,... Etching methods, methods of removing portions of material,...

2005-04-12

2005-04-12

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S072000, C216S079000, C134S001100, C134S021000, C134S022100, C438S714000, C438S719000, C438S723000, C438S734000

Reexamination Certificate

active

06878300

ABSTRACT:
In one embodiment, the invention includes a method of removing at least a portion of a material from a substrate. The method includes providing a substrate in a reaction chamber, the substrate having a material supported thereover, and first etching the material while the substrate is in the reaction chamber. The method also includes, after the first etching, cleaning a component from at least one sidewall of the reaction chamber while the substrate remains therein; the component comprising a species that is present in the material. The cleaning includes exposing the sidewall and substrate to conditions which substantially selectively remove the component from the sidewall while not removing the material from the substrate, and not etching any other materials supported by the substrate. After the cleaning, the method includes second etching the material while the substrate is in the reaction chamber.

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