Semiconductor device, electro-optical device, electronic...

Details Semiconductor device, electro-optical device, electronic... Semiconductor device, electro-optical device, electronic...

2005-04-19

2005-04-19

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C257S413000, C257S414000

Reexamination Certificate

active

06882016

ABSTRACT:
A semiconductor device is provided including a transistor having excellent ON current characteristics and OFF leakage current characteristics, an electro-optical device holding an electro-optical material using the semiconductor device, an electronic apparatus using the electro-optical device, and a method for manufacturing the semiconductor device. For a transistor, a source region and a drain region are impurity regions heavily doped by a self-aligned method relative to a gate electrode. Parts of the gate insulating film overlapping with boundary regions of the channel formation region adjacent to the drain region and the source region, are thicker than a part of the gate insulating film overlapping with a center part of the channel formation region, relative to the longitudinal direction of the channel.

REFERENCES:
patent: 5314834 (1994-05-01), Mazure et al.
patent: 20030025444 (2003-02-01), Seo et al.
patent: A 6-120249 (1994-04-01), None
patent: A 7-142735 (1995-06-01), None
Yazaki et al., “Conduction Mechanism of Leakage Current Observed in Metal-Oxide-Semiconductor Transistors and Poly-Si Thin-Film Transistors”, Jpn. J. Appl. Phys., vol. 31 (1992), pp 206-209, Jan.

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