Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2005-04-19
2005-04-19
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S086000, C117S939000, C117S935000, C118S715000
Reexamination Certificate
active
06881259
ABSTRACT:
Analysis of residual gases from a process for depositing a film containing silicon on a crystalline silicon surface to determine partial pressure of hydrogen evolved during deposition develops a signature which indicates temperature and/or concentration of germanium at the deposition surface. Calibration and collection of hydrogen partial pressure data at a rate which is high relative to film deposition rate allows real-time, in-situ, non-destructive determination of material concentration profile over the thickness of the film and/or monitoring the temperature of a silicon film deposition process with increased accuracy and resolution to provide films of a desired thickness with high accuracy.
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Ahlgren David C.
Chu Jack Oon
Jagannathan Basanth
Wuthrich Ryan W.
Abate Joseph P.
Kunemund Robert
Whitham Curtis & Christofferson, P.C.
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