Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-11
2005-01-11
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S560000
Reexamination Certificate
active
06841829
ABSTRACT:
In a BSCR and method of making a BSCR, a npn BJT structure is created and a p+ region is provided that is connected to the collector of the BJT, and one or more of the NBL, sinker and n+ collector of the BJT are partially blocked. In this way the NBL is formed into a comb-like NBL with a plurality of tines in one embodiment. The sinker and n+ collector may also be formed into a plurality islands. Furthermore, the period of the tines and islands may be varied to provide the desired BSCR characteristics.
REFERENCES:
patent: 5811856 (1998-09-01), Lee
patent: 6285062 (2001-09-01), Marr
patent: 6559509 (2003-05-01), Hatano et al.
patent: 6713816 (2004-03-01), Wolf et al.
Beek Marcel ter
Concannon Ann
Hopper Peter J.
Vashchenko Vladislav
National Semiconductor Corporation
Ngo Ngan V.
Vollrath Jurgen
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