Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2005-03-15
2005-03-15
Tran, M. (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S226000
Reexamination Certificate
active
06868005
ABSTRACT:
A driver transistor supplying a data write current to a write digit line is arranged to have its gate length direction along the same direction with a write digit line. Further, the write digit line has a reinforced portion arranged between an ordinary portion corresponding to a region where memory cells are arranged and a power supply interconnection, having interconnection cross sectional area greater than that of the ordinary portion. With this configuration, the chip area can be decreased as an increase of layout pitch of the memory cells dependent on the driver transistor size is prevented, and operational reliability can also be improved as a local increase of the current density on the write digit line is avoided.
REFERENCES:
patent: 6349054 (2002-02-01), Hidaka
U.S. Appl. No. 10/166,784, filed Jun. 12, 2002, Hidaka.
U.S. Appl. No. 10/328,032, filed Dec. 26, 2002, Hidaka.
Scheuerlein, et al. “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell” 2000 IEEE International Solid-State Circuits Conference Digest of Technical Papers (2000) TA 7.2.
Durlam, et al. “Nonvolatile RAM Based on Magnetic Tunnel Junction Elements” IEEE International Solid-State Circuits Conference Digest of Technical Papers (2000) TA 7.3.
Naji, et al. “A 258kb 3.0V 1T1MTJ Nonvolatile Magnetoresistive RAM” 2001 IEEE International Solid-State Circuits Conference Digest of Technical Papers (Feb. 6, 2001) 7.6.
McDermott Will & Emery LLP
Renesas Technology Corp.
Tran M.
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