MOS transistor and fabrication method thereof

Details MOS transistor and fabrication method thereof MOS transistor and fabrication method thereof

2005-07-26

2005-07-26

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S333000, C257S334000, C257S331000, C257S332000, C257S329000, C438S259000, C438S412000, C438S270000, C438S272000

Reexamination Certificate

active

06921940

ABSTRACT:
A MOS transistor suitable for microscopic applications and a fabrication method thereof are disclosed. The fabrication method includes forming a trench by selectively etching a semiconductor substrate; forming a channel region consisting of a silicon layer with a predetermined width in the bottom of the trench and forming a gate oxide film on the channel region; forming a SiGe film on the gate oxide film and within the trench and burying the trench; forming a gate groove with a predetermined width to expose the gate oxide film by selectively etching the SiGe film; and forming a gate electrode by forming a silicon layer on the exposed gate oxide film such that the gate groove is buried.

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patent: 6720617 (2004-04-01), Einav
patent: 6818946 (2004-11-01), Venkatraman

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