Semiconductor device with alternating conductivity type...

Details Semiconductor device with alternating conductivity type... Semiconductor device with alternating conductivity type...

2005-05-03

2005-05-03

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S302000, C257S341000, C257S342000, C257S288000

Reexamination Certificate

active

06888195

ABSTRACT:
A power semiconductor device is disclosed, which comprises a semiconductor layer including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type, which are periodically formed in the lateral direction, and a power semiconductor element including the semiconductor layers that are formed periodically, wherein a distribution of an amount of an impurity in a vertical direction of the first semiconductor layer differs from a distribution of an amount of an impurity in the vertical direction of the second semiconductor layer.

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R. Ng, et al. “Lateral Unbalanced Super Junction (USJ)/3D-Resurf for High Breakdown Voltage on SOI”, Proceedings of 2001 International Symposium on Power Semiconductor Devices & ICs, pp. 395-398, 2001.

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