Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2005-03-29
2005-03-29
Alanko, Anita (Department: 1765)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S024000, C216S033000, C216S036000, C216S040000, C216S041000, C216S049000, C216S067000, C438S029000
Reexamination Certificate
active
06872319
ABSTRACT:
A MEMS fabrication process eliminates through-wafer etching, minimizes the thickness of silicon device layers and the required etch times, provides exceptionally precise layer to layer alignment, does not require a wet etch to release the moveable device structure, employs a supporting substrate having no device features on one side, and utilizes low-temperature metal-metal bonding which is relatively insensitive to environmental particulates. This process provided almost 100% yield of scanning micromirror devices exhibiting scanning over a 12° optical range and a mechanical angle of±3° at a high resonant frequency of 2.5 kHz with an operating voltage of only 20 VDC.
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Alanko Anita
Rockwell Scientific Licensing LLC
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