Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-12
2005-04-12
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S536000
Reexamination Certificate
active
06879004
ABSTRACT:
A spark gap device for protecting an integrated circuit. The spark gap device includes a first node for receiving an input signal and a second node to be protected. A first conductive layer is conductively interfaced to the first node and the second node and disposed therebetween. A second conductive layer is connected to a sink voltage and separated from the first conductive layer by an insulating layer of a predetermined thickness. A portion of the first conductive layer is disposed proximate to the second conductive layer and not overlying the second conductive layer, such that a gap is formed therebetween and the gap having a dimension that is greater than the thickness of the insulating layer.
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Holberg Douglas R.
Leung Ka Y.
Howison & Arnott , L.L.P.
Silicon Labs CP Inc.
Smoot Stephen W.
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