Transistor with reduced short channel effects and method

Details Transistor with reduced short channel effects and method Transistor with reduced short channel effects and method

2005-04-19

2005-04-19

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257S347000, C257S348000, C257S336000, C257S408000

Reexamination Certificate

active

06882013

ABSTRACT:
A method of fabricating a transistor (10) comprises forming source and drain regions (46) and (47) using a first sidewall (42) and (43) as a mask and forming a deep blanket source and drain regions (54) and (56) using a second sidewall (50) and (51) as a mask, the second sidewall (50) and (51) comprising at least part of the first sidewall (42) and (43).

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