Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2005-09-20
2005-09-20
Goudreau, George A. (Department: 1763)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S427000, C438S430000, C438S435000, C438S692000, C438S696000, C438S704000, C438S763000
Reexamination Certificate
active
06946359
ABSTRACT:
A method of fabricating a trench isolation with high aspect ratio. The method comprises the steps of: providing a substrate with a trench; depositing a first isolation layer filling the trench by low pressure chemical vapor deposition; etching the first isolation layer so that its surface is lowered to the opening of the trench; depositing a second isolation layer to fill the trench without voids by high density plasma chemical vapor deposition and achieving global planarization by chemical-mechanical polishing then providing a rapidly annealing procedure. Accordingly, the present invention achieves void-free trench isolation with high aspect ratio.
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Chang Chih-How
Liao Wen-Sheng
Shih Neng-Tai
Yang Sheng-Wei
Goudreau George A.
Nanya Technology Corporation
Quintero Law Office
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