Thin film magnetic memory device provided with program element

Details Thin film magnetic memory device provided with program element Thin film magnetic memory device provided with program element

2005-01-11

2005-01-11

Nguyen, Van Thu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S094000, C365S096000, C365S171000, C365S225700

Reexamination Certificate

active

06842367

ABSTRACT:
A program element has a magnetic layer electrically connected between first and second nodes. At least a portion of the magnetic layer forms a link portion designed to be blown with external laser irradiation. The magnetic layer is provided in the same layer as and with the same structure as a tunneling magneto-resistance element in an MTJ memory cell. An electrical contact between the magnetic layer and respective one of the first and second nodes has the same structure as the electrical contact between the tunneling magneto-resistance element and an interconnection provided in the same metal interconnection layer as respective one of the first and second nodes in the MTJ memory cell.

REFERENCES:
patent: 6683807 (2004-01-01), Hidaka
patent: 6751149 (2004-06-01), Seyyedy et al.
patent: 6778432 (2004-08-01), Ohtani
patent: 20040057281 (2004-03-01), Ooishi
patent: 2002-117684 (2002-04-01), None
Scheuerlein, et al. “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell” IEEE International Solid-State Circuits Conference (2000) TA 7.2.
Durlam, et al. “Nonvolatile RAM Based on Magnetic Tunnel Junction Elements” IEEE International Solid-State Circuits Conference (2000) TA 7.3.
Naji, et al. “A 256kb 3.0V 1T1MJT Nonvolatile Magnetoresistive RAM” IEEE International Solid-State Circuits Conference (2001) 7.6.

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