Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-03-01
2005-03-01
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S149000, C438S758000
Reexamination Certificate
active
06861377
ABSTRACT:
The invention provides a surface treatment method by which a substrate with desired uniform lyophilicity is obtained in order to enhance the formation of a film pattern by an ink-jet process; a surface-treated substrate obtained by the surface treatment; and a method of forming a film pattern.A surface of a substrate is subjected to lyophobic treatment by forming a self-assembled layer composed of organic molecules. The lyophobicity is then modified by ultraviolet irradiation or the like to obtain desired lyophobicity.
REFERENCES:
patent: 3876424 (1975-04-01), Inoue et al.
patent: 5132248 (1992-07-01), Drummond et al.
patent: 6521200 (2003-02-01), Silveston et al.
patent: 6540335 (2003-04-01), Touge et al.
patent: 20020151161 (2002-10-01), Furusawa
patent: 20030003748 (2003-01-01), Khan et al.
patent: 20030085057 (2003-05-01), Hashimoto
patent: 20030203643 (2003-10-01), Hasei et al.
patent: 20040041753 (2004-03-01), Nakanishi
patent: A-59-75205 (1984-04-01), None
patent: A-2002-23356 (2002-01-01), None
Hasei Hironori
Hirai Toshimitsu
Oliff & Berridg,e PLC
Perkins Pamela E
Seiko Epson Corporation
Zarabian Amir
LandOfFree
Surface treatment method, surface-treated substrate, method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Surface treatment method, surface-treated substrate, method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Surface treatment method, surface-treated substrate, method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3389964