Method of forming metal wiring and semiconductor...

Details Method of forming metal wiring and semiconductor... Method of forming metal wiring and semiconductor...

2005-07-05

2005-07-05

Quach, T. N. (Department: 2814)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C438S656000, C438S685000

Reexamination Certificate

active

06913996

ABSTRACT:
A metal film forming method, includes the steps of (a) (s13, s15) supplying a plural kinds of ingredient gases to a base barrier film (3) in sequence, wherein at least one of the gases includes a metal, and (b) (s14, s16) vacuum-exhausting the ingredient gases of the step (a) or substituting the ingredient gases of the step (a) by an other kind of gas after the ingredient gases of the step (a) are supplied respectively, thereby an extremely thin film (5) of the metal is formed on the base barrier film (3).

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