Method for crystallizing semiconductor material without...

Details Method for crystallizing semiconductor material without... Method for crystallizing semiconductor material without...

2005-04-19

2005-04-19

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S096000, C438S097000, C438S162000, C438S487000, C438S308000

Reexamination Certificate

active

06881615

ABSTRACT:
A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5×1019atoms·cm−3or lower, preferably 1×1019atoms·cm−3or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.

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