Double-metal EUV mask absorber

Details Double-metal EUV mask absorber Double-metal EUV mask absorber

2005-07-05

2005-07-05

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Forming or treating optical article

C216S041000, C216S047000, C216S054000, C430S005000

Reexamination Certificate

active

06913706

ABSTRACT:
A composite extreme ultraviolet light (EUV) mask absorber structure and method are disclosed to address the structural and processing requirements of EUV lithography. A first mask absorber layer anisotropically etched with minimal etch bias at a relatively fast etch rate, is combined with a highly-selective second mask absorber layer, to produce a mask absorber with desirable hybrid performance properties.

REFERENCES:
patent: 6479195 (2002-11-01), Kirchauer et al.
patent: 2002/0045108 (2002-04-01), Lee et al.

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