Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-05-03
2005-05-03
Lee, Eddie (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S779000, C257S688000, C438S117000
Reexamination Certificate
active
06887777
ABSTRACT:
The present invention provides a method for connecting an integrated circuit to a substrate, which has the following steps: provision of a first electrical contact structure on a first main area of the integrated circuit; provision of a corresponding second electrical contact structure on an upper side of the substrate; at least one of the first and second electrical contact structures having elastic elevations; attachment of a second main area of the integrated circuit to a frame structure; placement of the first electrical contact structure onto the second electrical contact structure, so that the two are in electrical contact; and attachment of the frame structure to the substrate in such a way that the elastic elevations are under compressive stress. The invention likewise provides a corresponding circuit arrangement.
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Fish & Richardson P.C.
Infineon - Technologies AG
Lee Eddie
Owens Douglas W.
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