Methods to form metal lines using selective electrochemical...

Details Methods to form metal lines using selective electrochemical... Methods to form metal lines using selective electrochemical...

2005-05-03

2005-05-03

Smith, Matthew (Department: 2825)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S626000, C438S396000, C438S678000, C438S393000, C257S532000, C257S043000, C257S307000, C257S535000, C257S640000, C257S751000, C257S762000

Reexamination Certificate

active

06887776

ABSTRACT:
Methods are provided for forming a transistor for use in an active matrix liquid crystal display (AMLCD). In one aspect a method is provided for processing a substrate including providing a glass substrate, depositing a conductive seed layer on a surface of the glass substrate, depositing a resist material on the conductive seed layer, patterning the resist layer to expose portions of the conductive seed layer, and depositing a metal layer on the exposed portions of the conductive seed layer by an electrochemical technique.

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