Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-04-05
2005-04-05
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S779000, C438S780000
Reexamination Certificate
active
06875708
ABSTRACT:
There is disclosed a method of producing a diamond film formed on a substrate, wherein at least after a film (dopant layer) containing doping elements is formed on a surface of the substrate, a vapor phase synthetic diamond film is formed on the dopant layer, and the dopant layer contains diamond particles, which become sources of diamond nuclei, in addition to doping elements, and also disclosed a diamond film produced by the method. There can be provided a method of producing a diamond film that a diamond film having lowered electric resistance can be produced, and also provided a diamond film produced by the method.
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patent: 5782975 (1998-07-01), Linn
patent: 5964942 (1999-10-01), Tanabe et al.
Kenji Marumoto et al., “Fabrication of Diamond Membranes for X-Ray Masks by Hot-Filament Mehtod”, Jpn. J. Appl. Phys. vol. 31 (1992) pp. 4205-4209 Part 1, No. 12B Dec. 1992.
Hogan & Hartson LLP
Le Dung A.
Shin-Etsu Chemical Co. , Ltd.
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