Semiconductor device manufacturing: process – With measuring or testing
Reexamination Certificate
2005-09-13
2005-09-13
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
With measuring or testing
C438S017000, C324S522000, C324S765010
Reexamination Certificate
active
06943042
ABSTRACT:
A method of detecting spatially correlated variations that may be used for detecting statistical outliers in a production lot of integrated circuits to increase the average service life of the production lot includes measuring a selected parameter of each of a plurality of electronic circuits replicated on a common surface; calculating a difference between a value of the selected parameter at a target location and a value of the selected parameter an identical relative location with respect to the target location for each of the plurality of electronic circuits to generate a distribution of differences; calculating an absolute value of the distribution of differences; and calculating an average of the absolute value of the distribution of differences to generate a representative value for the residual for the identical relative location.
REFERENCES:
patent: 6023186 (2000-02-01), Kuroda
Thibeault , “On the Comparison of Iddq Testing” VLSI Test Symposium 1999, pp 143-150.
Sabade, “Improved wafer-level spatial analysis or Iddq limit setting”, Test Conference 2001, pp 82-91.
Cota Kevin
Madge Robert
Whitefield Bruce
Fitch Even Tabin & Flannery
LSI Logic Corporation
Trinh Michael
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