Spin dependent tunneling junctions including ferromagnetic...

Details Spin dependent tunneling junctions including ferromagnetic... Spin dependent tunneling junctions including ferromagnetic...

2005-04-26

2005-04-26

Zarabian, Amir (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C365S171000, C365S158000

Reexamination Certificate

active

06885049

ABSTRACT:
A spin dependent tunneling (“SDT”) junction of a memory cell for a Magnetic Random Access Memory (“MRAM”) device includes a pinned ferromagnetic layer, followed by an insulating tunnel barrier and a sense ferromagnetic layer. During fabrication of the MRAM device, after formation of the pinned layer but before formation of the insulating tunnel barrier, an exposed surface of the pinned layer is flattened. The exposed surface of the pinned layer may be flattened by an ion etching process.

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