Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-05-10
2005-05-10
Mai, Anh Duy (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S486000
Reexamination Certificate
active
06890805
ABSTRACT:
When a crystalline semiconductor thin film formed by using a catalytic element for facilitating crystallization is subjected to a heat treatment in an atmosphere containing a halogen element at a temperature exceeding 700° C., a crystal structure in which crystal grain boundaries do not substantially exist can be obtained. In the present invention, the foregoing crystalline semiconductor thin film is formed on a crystallized glass substrate which is inexpensive and has high heat resistance, so that an inexpensive semiconductor device can be provided.
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Ohtani Hisashi
Yamazaki Shunpei
Duy Mai Anh
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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