Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-09-20
2005-09-20
Nguyen, Ha Tran (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S639000, C438S687000
Reexamination Certificate
active
06946389
ABSTRACT:
Buried conductors within semiconductor devices and structures, and methods for forming such conductors, are disclosed. In one embodiment of the invention, a semiconductor structure includes a substrate and a plurality of conductive elements buried within the substrate. The conductive elements may be metal, such as tungsten or a tungsten alloy. The invention described in the disclosure provides for advantages including formation of three-dimensional structures without resort to external wiring.
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Farrar Paul A.
Noble Wendell P.
Nguyen Ha Tran
Schwegman Lundberg Woessner & Kluth P.A.
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