Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-09-06
2005-09-06
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S652000, C438S686000, C438S687000
Reexamination Certificate
active
06939803
ABSTRACT:
An integrated circuit and manufacturing method therefor is provided having a semiconductor substrate with a semiconductor device. A device dielectric layer is formed on the semiconductor substrate. A first dielectric layer on the device dielectric layer has an opening formed therein including a conductor reservoir volume. A barrier layer lines the channel opening. A conductor core fills the opening over the barrier layer. A second dielectric layer is formed on the first dielectric layer and has a second channel and via opening provided therein. A barrier layer lines the second channel and via opening except over the first channel opening. A conductor core fills the second channel and via opening over the barrier layer and the first conductor core to form the second channel and via. The conductor reservoir volume provides a supply of conductor material to prevent the formation of voids in the first channel and in the via.
REFERENCES:
patent: 5504375 (1996-04-01), Carlson et al.
patent: 5506450 (1996-04-01), Lee et al.
patent: 5793113 (1998-08-01), Oda
patent: 5904565 (1999-05-01), Nguyen et al.
patent: 5985762 (1999-11-01), Geffken et al.
patent: 6040243 (2000-03-01), Li et al.
patent: 6150723 (2000-11-01), Harper et al.
patent: 6169024 (2001-01-01), Hussein
patent: 6228767 (2001-05-01), Yakura
patent: 10261715 (1998-09-01), None
patent: 11138303 (1999-05-01), None
Marathe Amit P.
Mei-Chu Woo Christy
Wang Pin-Chin Connie
Advanced Micro Devices , Inc.
Ishimaru Mikio
Richards N. Drew
Thomas Tom
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