Semiconductor device having an SOI substrate

Details Semiconductor device having an SOI substrate Semiconductor device having an SOI substrate

2005-04-12

2005-04-12

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S354000, C257S506000

Reexamination Certificate

active

06879002

ABSTRACT:
A semiconductor device comprising an SOI substrate fabricated by forming a silicon layer3on an insulating layer2, a plurality of active regions3horizontally arranged in the silicon layer3, and element isolating parts5having a trench-like shape which is made of an insulator5embedded between the active regions3in the silicon layer3, wherein the insulating layer2has spaces6positioned in the vicinity of interfaces between the active regions and the element isolating parts5, whereby it becomes possible to reduce fixed charges or holes existing on a side of the insulating layer in interfaces between the silicon layer and the insulating layer, which fixed charges or holes are generated in a process of oxidation for forming the insulating layer on a bottom surface of the silicon layer.

REFERENCES:
patent: 5126817 (1992-06-01), Baba et al.
patent: 5739574 (1998-04-01), Nakamura
patent: 2-222160 (1990-09-01), None
patent: 02222160 (1990-09-01), None
patent: 6-349940 (1994-12-01), None

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