Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-12
2005-07-12
Nguyen, Tuan H. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S371000, C257S500000
Reexamination Certificate
active
06917081
ABSTRACT:
A semiconductor device is provided comprising several device components formed in the same substrate, such as a P-substrate having an offset Nch transistor including N-type source and drain each formed in a P-well spatially separated from one another, and the drain surrounded by a low concentration N-type diffusion layer; an offset Pch transistor including P-type source and drain each formed in an N-well spatially separated from one another, and the drain surrounded by a low concentration P-type diffusion layer; a triple well including a deep N-well, and a P-type IP well formed therein; a normal N-well for forming a Pch MOS transistor; and a normal P-well for forming an Nch MOS transistor; in which simultaneously formed are the low concentration N-type diffusion layer, N-well and normal N-well; the P-well and normal P-well; and the low concentration P-type diffusion layer and IP well.
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Ueda Naohiro
Ueda Yoshinori
Dickstein , Shapiro, Morin & Oshinsky, LLP
Nguyen Tuan H.
Ricoh & Company, Ltd.
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