Static information storage and retrieval – Read/write circuit – Simultaneous operations
Reexamination Certificate
2005-09-13
2005-09-13
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Read/write circuit
Simultaneous operations
C365S185010, C365S185180, C365S185290, C365S189011
Reexamination Certificate
active
06944065
ABSTRACT:
The present invention is in the field of flash memory. More particularly, embodiments of the present invention may provide a negative voltage for erasing when coupled to a memory cell to be erased and provide voltages to read or program when not coupled to a memory cell that is selected to be erased. Embodiments may also provide a high magnitude negative voltage to erase; a low impedance, low voltage current to read or program; and burn little to no current when not coupled to a memory cell that is selected to be erased.
REFERENCES:
patent: 5491656 (1996-02-01), Sawada
patent: 5663907 (1997-09-01), Frayer et al.
patent: 6571307 (2003-05-01), Kuo et al.
Sundaram Rajesh
Tedrow Kerry D.
Nguyen Van-Thu
Shah Ami Patel
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