Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-05
2005-07-05
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S118000, C438S396000, C438S697000
Reexamination Certificate
active
06913997
ABSTRACT:
Ta—Al—N is formed on a semiconductor device structure, such as a wiring line, to prevent interdiffusion between surrounding layers. The Ta—Al—N material may serve as a diffusion between two conductor layers, a semiconductor layer and a conductor layer, an insulator layer and a conductor layer, an insulator layer and a semiconductor layer, or two semiconductor layers. Another use is to promote adhesion of adjacent layers, such as between two conductor layers, a conductor layer and an insulator layer, a semiconductor layer and a conductor layer, or two semiconductor layers. The Ta—Al—N material also may be used to form a contact or electrode.
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Akram Salman
Meikle Scott G.
Ha Nathan W.
Micro)n Technology, Inc.
Pham Long
TraskBritt
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