Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2005-01-18
2005-01-18
Whitmore, Stacy A. (Department: 2812)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
Reexamination Certificate
active
06845497
ABSTRACT:
Patterns for exposure are divided into subdivided regions taking into consideration a scope of an effect of backscattering, the Coulomb effect, and process factors, respectively, on errors in dimensions, and a pattern area occupancy ratio (pattern area density) within the respective subdivided regions is retained, thereby executing exposure with patterns after finding dimensions of pattern modification as the function of the respective pattern area densities. As a result, it becomes possible to fabricate a mask provided with correction for the errors in the dimensions, caused by plural factors such as backscattering, the Coulomb effect, and process factors, and to obtain highly accurate patterns for exposure. Further, use of pattern area density maps enables data processing time necessary for correction to be considerably reduced.
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Fukuda Hiroshi
Murai Fumio
Hitachi , Ltd.
Mattingly Stanger & Malur, P.C.
Whitmore Stacy A.
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