Semiconductor component, trench structure transistor, trench...

Details Semiconductor component, trench structure transistor, trench... Semiconductor component, trench structure transistor, trench...

2005-04-19

2005-04-19

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000

Reexamination Certificate

active

06882004

ABSTRACT:
A semiconductor component has a minimal size and area requirement. The semiconductor component is formed in a trench with wall regions and a bottom region. Terminal regions for the electrical connection of first and second contact regions (S, B) are formed at least partly within the trench (30).

REFERENCES:
patent: 5012308 (1991-04-01), Hieda
patent: 5512767 (1996-04-01), Noble, Jr.
patent: 5742076 (1998-04-01), Sridevan et al.
patent: 5883411 (1999-03-01), Ueda et al.
patent: 5998833 (1999-12-01), Baliga
patent: 6351018 (2002-02-01), Sapp
patent: 6380569 (2002-04-01), Chang et al.
patent: 6521954 (2003-02-01), Kouzuki et al.

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