pn Varactor

Details pn Varactor pn Varactor

2005-07-26

2005-07-26

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S313000, C257S315000, C257S316000

Reexamination Certificate

active

06921936

ABSTRACT:
An object of this invention is to provide a pn-varactor having a small resistance and capable of coinciding with incorporation of a circuit employing LC resonance into an integrated circuit. A dummy gate pattern4is formed over a n-well1in a semiconductor wafer and then p+diffusion regions2, 3are formed on both sides with the dummy gate pattern4as inhibition mask. For the purpose, a control voltage VT higher than potentials of the p+diffusion regions2, 3is applied to the n-well1.Consequently, both the pn-junction between the n-well1and the p+diffusion region2and the pn-junction between the n-well1and the p+diffusion region3act as a pn-varactor whose capacity is changed by the control voltage VT. If an end dummy pattern is provided on both sides or around the p+diffusion regions2, 3,imbalance in capacity due to deflection in position is prevented.

REFERENCES:
patent: 2002/0044012 (2002-04-01), Otsuka et al.
patent: 2000-252480 (2000-09-01), None

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