Dynamic random access memory(DRAM) capable of canceling out...

Details Dynamic random access memory(DRAM) capable of canceling out... Dynamic random access memory(DRAM) capable of canceling out...

2005-09-13

2005-09-13

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S051000, C365S072000, C365S063000, C365S206000, C365S190000, C365S230030, C365S230060

Reexamination Certificate

active

06944080

ABSTRACT:
A dynamic RAM comprising a plurality of word lines respectively connected to address select terminals of a plurality of dynamic memory cells, a plurality of complementary bit line pairs respectively connected to input/output terminals of the plurality of dynamic memory cells and placed in directions opposite to one another, and a sense amplifier array which is supplied with an operating voltage according to an operation timing signal and comprises a plurality of latch circuits for respectively amplifying the differences in voltage between the complementary bit line pairs. In the dynamic RAM, common electrodes provided in opposing relationship to storage nodes corresponding to connecting points between address select MOSFETs and information storage capacitors of the plurality of dynamic memory cells, on both sides with the sense amplifier array as the center are connected to one another while circuit connections in the sense amplifier array are being ensured by wiring using the common electrodes.

REFERENCES:
patent: 4476547 (1984-10-01), Miyasaka
patent: 4799197 (1989-01-01), Kodama et al.
patent: 5420816 (1995-05-01), Ogihara et al.
patent: 5986961 (1999-11-01), Igarashi
patent: 6072208 (2000-06-01), Nishihara
patent: 6501672 (2002-12-01), Sekiguchi et al.
patent: 6807120 (2004-10-01), Sekiguchi et al.
patent: 59-002365 (1984-01-01), None
patent: 60-195795 (1985-10-01), None
patent: 60-211871 (1985-10-01), None
patent: 09-135009 (1997-05-01), None

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