Method of forming mask, method of forming patterned thin...

Details Method of forming mask, method of forming patterned thin... Method of forming mask, method of forming patterned thin...

2005-04-19

2005-04-19

Walke, Amanda (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S312000, C430S313000, C430S314000

Reexamination Certificate

active

06881534

ABSTRACT:
In a method of forming a mask, initially, a first layer is formed on a base layer. The first layer is made of a material being soluble in a developer used for developing a resist and having a higher removal rate in ashing than the resist. Next, a second layer made of the resist is formed on the first layer, and exposed to light. Next, the second layer is developed and part of the first layer is dissolved using the developer. In this step, the width of the first layer is made equal to or greater than that of the second layer. Next, the width of the first layer is made smaller than that of the second layer through ashing. As a result of the ashing, the first layer makes the lower layer of the mask and the second layer makes the upper layer.

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