Method of designing semiconductor integrated circuit device...

Details Method of designing semiconductor integrated circuit device... Method of designing semiconductor integrated circuit device...

2005-03-15

2005-03-15

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S206000, C257S207000, C257S208000, C257S210000, C257S211000

Reexamination Certificate

active

06867465

ABSTRACT:
In a semiconductor integrated circuit device with a transistor, there are a single diffusion layer and a gate base electrode provided outside of the diffusion layer to extend in a pitch direction. N (N is an odd positive integer) gate electrodes are provided above the diffusion layer in parallel in the pitch direction to extend from the gate base electrode in a height direction orthogonal to the pitch direction to pass through the diffusion layer. Source nodes are provided on the diffusion layer along one of the N gate electrodes on a side outside the N gate electrodes in a direction opposing to the pitch direction as a head gate electrode. Drain nodes are provided on the diffusion layer along another of the N gate electrodes on a side outside the N gate electrodes in the pitch direction as a last gate electrode. The drain nodes are less than the source nodes.

REFERENCES:
patent: 6462364 (2002-10-01), Horiuchi
patent: 11-163642 (1999-06-01), None

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