Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-05-24
2005-05-24
Elms, Richard (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
06898112
ABSTRACT:
A nearly balanced synthetic antiferromagnetic (SAF) structure that can be advantageously used in magnetoelectronic devices such as a magnetoresistive memory cell includes two ferromagnetic layers and an antiferromagnetic coupling layer separating the two ferromagnetic layers. The SAF free layer has weakly coupled regions formed in the antiferromagnetic coupling layer by a treatment such as annealing, layering of the antiferromagnetic coupling layer, or forming the antiferromagnetic coupling layer over a roughened surface of a ferromagnetic layer. The weakly coupled regions lower the flop field of the SAF free layer in comparison to untreated SAF free layers. The SAF flop is used during the write operation of such a structure and its reduction results in lower power consumption during write operations and correspondingly increased device performance.
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Engel Bradley N.
Janesky Jason Allen
Rizzo Nicholas D.
Slaughter Jon M.
Elms Richard
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz P.C.
Luu Pho M.
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